Manufacturer Part Number
SIS444DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Vishay's SIS444DN-T1-GE3 is a high-performance, single N-channel power MOSFET designed for efficient power management and control in a wide range of applications.
Product Features and Performance
Robust and reliable MOSFET design for high-power operations
Low on-resistance (RDS(on)) of 3.3 mOhm at 10A, 10V
High continuous drain current (ID) of 35A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge (Qg) of 102 nC at 10V
Product Advantages
Excellent thermal management and power dissipation of up to 52W
Optimized for high-efficiency power conversion and control
Compact PowerPAK 1212-8 package for space-constrained designs
Suitable for various power management and control applications
Key Technical Parameters
Drain to Source Voltage (VDS): 30V
Gate to Source Voltage (VGS): ±20V
Threshold Voltage (VGS(th)): 2.3V at 250A
Drive Voltage (VGS): 4.5V (max RDS(on)), 10V (min RDS(on))
Input Capacitance (Ciss): 3065 pF at 15V
Quality and Safety Features
Meets industry-standard quality and reliability requirements
RoHS-compliant and halogen-free for environmental sustainability
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Telecommunications and networking equipment
Consumer electronics
Product Lifecycle
Currently available and actively supported by Vishay/Siliconix
No known plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent performance and efficiency for power management and control
Robust and reliable design for demanding applications
Compact and space-saving package for compact system designs
Broad operating temperature range for versatile deployment
Proven quality and reliability from a trusted semiconductor manufacturer
SIS448DN-T1-E3Electro-Films (EFI) / Vishay