Manufacturer Part Number
SIS452DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET in a compact PowerPAK 1212-8 package.
Product Features and Performance
Ultra-low on-resistance for high efficiency
High current capability up to 35A
Low gate charge for fast switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact and efficient power management
Improved thermal performance
Increased power density
Reliable operation in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.25mΩ @ 20A, 10V
Continuous Drain Current (Id): 35A @ 25°C
Input Capacitance (Ciss): 1700pF @ 6V
Power Dissipation (Pd): 3.8W (Ta), 52W (Tc)
Quality and Safety Features
MOSFET technology for high reliability
RoHS3 compliant
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current production model, no discontinuation plans
Mature product with available replacements and upgrades
Key Reasons to Choose This Product
Exceptional efficiency and power density
Reliable performance in harsh environments
Ease of integration into compact power designs
Proven Vishay / Siliconix quality and support
SIS443DNVishay