Manufacturer Part Number
SIS443DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
40V Drain-Source Voltage
±20V Gate-Source Voltage
7mOhm Max On-Resistance @ 15A, 10V
35A Continuous Drain Current @ 25°C
4370pF Max Input Capacitance @ 20V
7W Max Power Dissipation @ 25°C, 52W Max @ Tc
-55°C to 150°C Operating Temperature Range
Product Advantages
Efficient power switching performance
High current handling capacity
Compact PowerPAK 1212-8 package
Key Technical Parameters
Drain-Source Voltage: 40V
Gate-Source Voltage: ±20V
On-Resistance: 11.7mOhm Max
Continuous Drain Current: 35A @ 25°C
Input Capacitance: 4370pF Max @ 20V
Power Dissipation: 3.7W Max @ 25°C, 52W Max @ Tc
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
Power management
Switching applications
Motor control
Industrial electronics
Product Lifecycle
Current product, no discontinuation information available
Replacement or upgrade parts may be available
Key Reasons to Choose
Excellent power switching performance
High current handling capability
Compact, efficient package
Broad temperature operating range
RoHS3 compliance for environmental compatibility