SIS438DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIS438DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SIS438DN-T1-GE3 is a high-performance, low-resistance N-channel power MOSFET from Vishay/Siliconix's TrenchFET series.

Product Features and Performance

N-channel MOSFET with low on-resistance of 9.5 mOhm @ 10 A, 10 V

Supports a continuous drain current of 16 A at 25°C

Wide operating temperature range of -55°C to 150°C

Low gate charge of 23 nC @ 10 V

High input capacitance of 880 pF @ 10 V

Product Advantages

Excellent power efficiency and low conduction losses

Suitable for high-current, high-frequency switching applications

Compact PowerPAK 1212-8 surface-mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Gate-Source Voltage (Vgs Max): ±20 V

Power Dissipation (Max): 3.5 W (Ta), 27.7 W (Tc)

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with various power supply, motor control, and other high-current switching circuits

Application Areas

Power supplies

Motor drives

Inverters

Power factor correction

Embedded systems

Product Lifecycle

The SIS438DN-T1-GE3 is an active product, and there are no plans for discontinuation at this time.

Replacement or upgrade options may be available from Vishay/Siliconix's TrenchFET product line.

Key Reasons to Choose This Product

Excellent power efficiency and low conduction losses

Suitable for high-current, high-frequency switching applications

Compact PowerPAK 1212-8 surface-mount package

Wide operating temperature range of -55°C to 150°C

RoHS3 compliance for high-reliability applications