Manufacturer Part Number
SIS439DNT-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel MOSFET for power management and switching applications
Product Features and Performance
Trench MOSFET technology
Low on-resistance
High current rating
High power dissipation
Wide operating temperature range
Product Advantages
Excellent energy efficiency
Reliable and robust performance
Suitable for high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Current Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 15 V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Quality and Safety Features
ROHS3 Compliant
PowerPAK 1212-8S package for improved thermal performance and reliability
Compatibility
Surface mount package
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product offering
Replacement and upgrade options available
Several Key Reasons to Choose This Product
Excellent energy efficiency through low on-resistance
Reliable and robust performance for high-power applications
Wide operating temperature range for versatile use
Compact and thermally efficient PowerPAK 1212-8S package
Suitable for a variety of power management and switching applications