Manufacturer Part Number
SIS454DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET suitable for a wide range of power conversion and power management applications.
Product Features and Performance
N-channel MOSFET with trench technology
Extremely low on-resistance
Fast switching speed
High continuous drain current capability
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency
Compact and space-saving design
Robust and reliable performance
Suitable for various power management applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.7mΩ @ 20A, 10V
Continuous Drain Current (Id): 35A @ 25°C
Input Capacitance (Ciss): 1900pF @ 10V
Power Dissipation: 3.8W (Ta), 52W (Tc)
Quality and Safety Features
Compliant with RoHS3 directive
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power conversion and power management applications
Application Areas
Switching power supplies
Motor drives
Automotive electronics
Industrial power control
General power management applications
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact and space-saving design
Robust and reliable operation
Wide operating temperature range
Suitable for diverse power management applications