Manufacturer Part Number
SIS435DNT-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This is a discrete semiconductor product, specifically a P-channel MOSFET transistor.
Product Features and Performance
20V drain-source voltage
-55°C to 150°C operating temperature range
4mOhm maximum on-resistance at 13A, 4.5V
30A continuous drain current at 25°C case temperature
5700pF maximum input capacitance at 10V
7W maximum power dissipation at 25°C ambient, 39W at 25°C case temperature
180nC maximum gate charge at 8V
Product Advantages
Low on-resistance for high efficiency
Wide operating temperature range
High current handling capability
Small package size for compact designs
Key Technical Parameters
Voltage rating: 20V
On-resistance: 5.4mOhm
Drain current: 30A
Input capacitance: 5700pF
Power dissipation: 3.7W (ambient), 39W (case)
Quality and Safety Features
RoHS3 compliant
Packaged in PowerPAK 1212-8 surface mount package
Compatibility
Suitable for use in a variety of electronic circuits and applications
Application Areas
Suitable for use in power management, motor control, and other high-power electronic circuits
Product Lifecycle
Current product, no information on discontinuation or replacements
Several Key Reasons to Choose This Product
Low on-resistance for high efficiency
Wide operating temperature range
High current handling capability
Small package size for compact designs
RoHS3 compliance for environmental responsibility