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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleSIS430DN-T1-GE3
Vishay Siliconix
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See specifications for product details.

SIS430DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number
SIS430DN-T1-GE3
Manufacturer
Vishay / Siliconix
Allelco Part Number
32D-SIS430DN-T1-GE3
ECAD Model
Parts Description
MOSFET N-CH 25V 35A PPAK 1212-8
Detailed Description
Package
PowerPAK® 1212-8
Data sheet
SIS430DN.pdf
RoHs Status
ROHS3 Compliant
In stock: 5470

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Quantity

Specifications

SIS430DN-T1-GE3 Tech Specifications
Vishay Siliconix - SIS430DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix - SIS430DN-T1-GE3

Product Attribute Attribute Value  
Manufacturer Vishay / Siliconix  
Vgs(th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package PowerPAK® 1212-8  
Series TrenchFET®  
Rds On (Max) @ Id, Vgs 5.1mOhm @ 20A, 10V  
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)  
Package / Case PowerPAK® 1212-8  
Package Tape & Reel (TR)  
Product Attribute Attribute Value  
Operating Temperature -55°C ~ 150°C (TJ)  
Mounting Type Surface Mount  
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 12.5 V  
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V  
FET Type N-Channel  
FET Feature -  
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V  
Drain to Source Voltage (Vdss) 25 V  
Current - Continuous Drain (Id) @ 25°C 35A (Tc)  
Base Product Number SIS430  

Parts Introduction

Manufacturer Part Number

SIS430DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This is a high-performance, N-channel power MOSFET from Vishay's TrenchFET series, designed for a wide range of power management and switching applications.

Product Features and Performance

25 V drain-to-source voltage

35 A continuous drain current at 25°C case temperature

Low on-resistance of 5.1 mΩ at 20 A, 10 V

Wide operating temperature range of -55°C to 150°C

High input capacitance of 1600 pF at 12.5 V

Low gate charge of 40 nC at 10 V

Surface mount package (PowerPAK 1212-8)

Product Advantages

Excellent power handling and efficiency

Robust design for high-reliability applications

Compact and space-saving surface mount package

Key Technical Parameters

Vdss: 25 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 5.1 mΩ @ 20 A, 10 V

Id (Continuous) @ 25°C: 35 A

Ciss (Max) @ Vds: 1600 pF @ 12.5 V

Power Dissipation (Max): 3.8 W (Ta), 52 W (Tc)

Vgs(th) (Max) @ Id: 2.5 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V

Qg (Max) @ Vgs: 40 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Reliable and robust design for long-term performance

Compatibility

This MOSFET is compatible with a wide range of power management and switching applications, including:

Switch-mode power supplies

Motor drives

DC-DC converters

Automotive electronics

Industrial control systems

Application Areas

Power management and conversion

Motor control

Industrial automation

Automotive electronics

Product Lifecycle

The SIS430DN-T1-GE3 is an active and readily available product from Vishay. There are no current plans for discontinuation, and replacement or upgrade options are available if needed.

Key Reasons to Choose This Product

Excellent power handling and efficiency due to the low on-resistance and high current capability.

Robust and reliable design for high-reliability applications, with a wide operating temperature range.

Compact and space-saving surface mount package (PowerPAK 1212-8) for efficient board layout.

Compliant with RoHS3 regulations, ensuring environmental sustainability.

Compatibility with a wide range of power management and switching applications, providing versatility.

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay Siliconix SIS430DN-T1-GE3

Product Attribute SIS430DN-T1-GE3 SIS438DN-T1-GE3 SIS436DN-T1-GE3 SIS427EDN-T1-GE3
Part Number SIS430DN-T1-GE3 SIS438DN-T1-GE3 SIS436DN-T1-GE3 SIS427EDN-T1-GE3
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Rds On (Max) @ Id, Vgs 5.1mOhm @ 20A, 10V 9.5mOhm @ 10A, 10V 10.5mOhm @ 10A, 10V 10.6mOhm @ 11A, 10V
Supplier Device Package PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 3.8W (Ta), 52W (Tc) 3.5W (Ta), 27.7W (Tc) 3.5W (Ta), 27.7W (Tc) 3.7W (Ta), 52W (Tc)
Vgs (Max) ±20V ±20V ±20V ±25V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.3V @ 250µA 2.3V @ 250µA 2.5V @ 250µA
FET Type N-Channel N-Channel N-Channel P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 12.5 V 880 pF @ 10 V 855 pF @ 10 V 1930 pF @ 15 V
Base Product Number SIS430 SIS438 SIS436 SIS427
Drain to Source Voltage (Vdss) 25 V 20 V 25 V 30 V
Package / Case PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 23 nC @ 10 V 22 nC @ 10 V 66 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 16A (Tc) 16A (Tc) 50A (Tc)
Series TrenchFET® TrenchFET® TrenchFET® TrenchFET®

SIS430DN-T1-GE3 Datasheet PDF

Download SIS430DN-T1-GE3 pdf datasheets and Vishay Siliconix documentation for SIS430DN-T1-GE3 - Vishay Siliconix.

Datasheets
SIS430DN.pdf
PCN Assembly/Origin
Multiple Fabracation Changes09/Jul/2014.pdf
PCN Obsolescence/ EOL
Mult Mosfet EOL 30/Aug/2018.pdf

Shipment

Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

  1. Use your express account for shipment if you have one.
  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Your Faithful Supply Chain Partner -

Contact us if you have any questions.

  1. Phone
    +00852 9146 4856

Certifications & Memberships

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Vishay Siliconix

SIS430DN-T1-GE3

Vishay Siliconix
32D-SIS430DN-T1-GE3

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