Manufacturer Part Number
SIS427EDN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Vishay's SIS427EDN-T1-GE3 is a P-Channel MOSFET transistor designed for power management applications.
Product Features and Performance
30V Drain to Source Voltage (Vdss)
50A Continuous Drain Current (Id) at 25°C
6mOhm Drain-Source On-Resistance (Rds(on)) at 11A, 10V
1930pF Input Capacitance (Ciss) at 15V
7W Power Dissipation at 25°C ambient, 52W at 25°C case temperature
-55°C to 150°C Operating Temperature Range
Product Advantages
High efficiency power conversion
Low on-resistance
Compact PowerPAK 1212-8 package
Key Technical Parameters
P-Channel MOSFET technology
30V Drain to Source Voltage
±25V Gate to Source Voltage
5V Gate Threshold Voltage at 250A
66nC Gate Charge at 10V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Surface mount package compatible with standard pick-and-place equipment.
Application Areas
Power management
Power amplifiers
Motor drives
Telecom and industrial power supplies
Product Lifecycle
This product is an active and available part from Vishay. No discontinuation or end-of-life is currently planned.
Key Reasons to Choose This Product
High power handling capability
Low on-resistance for improved efficiency
Compact PowerPAK package for space-constrained designs
Wide operating temperature range
RoHS compliance for environmental responsibility