Manufacturer Part Number
SIR172ADP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SIR172ADP-T1-GE3 is a high-performance N-channel MOSFET transistor from Vishay/Siliconix, designed for a wide range of power electronics applications.
Product Features and Performance
N-channel MOSFET with low on-resistance of 8.5 mΩ
High current capability of 24A continuous drain current
Wide operating temperature range of -55°C to 150°C
Low gate charge of 44 nC
Fast switching characteristics
Product Advantages
Excellent power efficiency due to low on-resistance
Compact PowerPAK SO-8 surface mount package
High reliability and ruggedness
Suitable for high-frequency, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
Input Capacitance (Ciss): 1515 pF
Power Dissipation (Tc): 29.8W
Quality and Safety Features
RoHS3 compliant
Manufactured in ISO-certified facilities
Compatibility
The SIR172ADP-T1-GE3 is compatible with a wide range of power electronics applications and can be used as a replacement for similar MOSFET devices.
Application Areas
Switching power supplies
Motor drives
Inverters
Power amplifiers
Industrial and automotive electronics
Product Lifecycle
The SIR172ADP-T1-GE3 is an active and widely available product, with no plans for discontinuation. Replacement and upgrade options are readily available.
Key Reasons to Choose This Product
Excellent power efficiency and high current capability
Compact and rugged package design
Wide operating temperature range
Fast switching performance
High reliability and RoHS compliance
Broad compatibility and availability