Manufacturer Part Number
SIR186LDP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in PowerPAK SO-8 package
Part of Vishay's TrenchFET Gen IV series
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
Low on-resistance of 4.4 mΩ @ 15 A, 10 V
High current capability of 23.8 A (Ta), 80.3 A (Tc)
Low input capacitance of 1980 pF @ 30 V
Low gate charge of 48 nC @ 10 V
Product Advantages
Excellent thermal efficiency and power dissipation
Compact, space-saving PowerPAK SO-8 package
Reliable performance in high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Gate-to-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 2.5 V @ 250 A
Drive Voltage: 4.5 V (Max Rds On), 10 V (Min Rds On)
Quality and Safety Features
RoHS3 compliant
Guaranteed reliability through comprehensive testing
Compatibility
Compatible with a wide range of power electronics and high-power applications
Application Areas
Suitable for high-power motor drives, power supplies, and other industrial applications
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available within the TrenchFET Gen IV series
Several Key Reasons to Choose This Product
Excellent thermal performance and power dissipation
Compact and space-saving PowerPAK SO-8 package
Reliable and durable for high-power applications
Broad operating temperature range of -55°C to 150°C
Low on-resistance and high current capability