Manufacturer Part Number
SIR172DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Trench MOSFET technology
High power density and efficiency
Low on-resistance (Rds(on))
High current capability (20A continuous)
Low gate charge (Qg)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Ideal for high-frequency, high-efficiency power conversion applications
Excellent thermal management through PowerPAK package
Compact and space-saving design
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 8.9mΩ @ 16.1A, 10V
Input Capacitance (Ciss): 997pF @ 15V
Power Dissipation (Tc): 29.8W
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Surface mount (SMD) package: PowerPAK SO-8
Application Areas
High-frequency, high-efficiency power conversion applications
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacements and upgrades available as technology evolves
Key Reasons to Choose This Product
Excellent power efficiency and thermal management
High current handling capability
Compact and space-saving design
Reliable and durable performance
Suitable for a wide range of high-frequency power conversion applications