Manufacturer Part Number
SIR188DP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET® Gen IV MOSFET
Product Features and Performance
Optimized for high-frequency switching applications
Extensive safe operating area (SOA)
Low on-resistance for high efficiency
Fast switching speed
Product Advantages
Excellent thermal performance
High reliability
Cost-effective solution
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.85mΩ @ 10A, 10V
Continuous Drain Current (Id): 25.5A (Ta), 60A (Tc)
Input Capacitance (Ciss): 1920pF @ 30V
Power Dissipation: 5W (Ta), 65.7W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable PowerPAK SO-8 package
Compatibility
Compatible with various high-frequency switching applications
Application Areas
High-frequency DC-DC converters
Power supplies
Motor drives
Inverters
Lighting ballasts
Product Lifecycle
Currently available
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved performance
Fast switching speed for high-frequency applications
Excellent thermal management and reliability
Cost-effective solution for various power conversion applications