Manufacturer Part Number
SIR182DP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET Gen IV MOSFET
Product Features and Performance
60V Drain-Source Voltage
8mΩ Typical On-Resistance
60A Continuous Drain Current
-55°C to 150°C Operating Temperature Range
Low Gate Charge and Input Capacitance
Excellent Switching Performance
Product Advantages
Optimized for efficient and reliable power conversion applications
Reduced power losses and improved system efficiency
Compact and thermally efficient PowerPAK SO-8 packaging
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.8mΩ @ 15A, 10V
Drain Current (Id): 60A (Tc)
Input Capacitance (Ciss): 3250pF @ 30V
Power Dissipation (Pd): 69.4W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with various power conversion and control applications
Application Areas
Synchronous Buck Converters
Motor Drives
Telecommunications and Network Infrastructure
Industrial and Consumer Electronics
Product Lifecycle
Current production, no known discontinuation plans
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance and efficiency for power conversion applications
Compact and thermally efficient packaging
Reliable and long-lasting operation in harsh environments
RoHS3 compliance for environmental sustainability