SIR402DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIR402DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel enhancement-mode power MOSFET in a PowerPAK SO-8 package

Product Features and Performance

Extremely low on-resistance for high efficiency

Fast switching for high-frequency applications

Rugged and reliable construction

Suitable for high-power, high-frequency switching applications

Product Advantages

Excellent power density

Increased power efficiency

Improved thermal management

Robust and reliable performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 6 mΩ @ 20 A, 10 V

Continuous Drain Current (Id): 35 A @ 25°C

Input Capacitance (Ciss): 1700 pF @ 15 V

Power Dissipation: 4.2 W (Ta), 36 W (Tc)

Quality and Safety Features

RoHS3 compliant

Reliable and durable PowerPAK SO-8 package

Suitable for high-temperature operations (-55°C to 150°C)

Compatibility

Suitable for surface mount applications

Compatible with a wide range of power management and control circuits

Application Areas

High-power, high-frequency switching applications

Power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

Current production model

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power efficiency and performance

Robust and reliable design for harsh environments

Compact and thermally efficient PowerPAK SO-8 package

Suitable for a wide range of high-power, high-frequency applications

RoHS3 compliance for environmental responsibility