Manufacturer Part Number
SIR404DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance power MOSFET
Designed for efficient power conversion and control applications
Product Features and Performance
N-Channel TrenchFET MOSFET
20V drain-source voltage
60A continuous drain current at 25°C case temperature
Very low on-resistance of 1.6mΩ at 20A, 10V
Fast switching speed
Low gate charge of 97nC at 4.5V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion and control
Excellent thermal management
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 1.6mΩ @ 20A, 10V
Drain Current (Id): 60A @ 25°C case temperature
Input Capacitance (Ciss): 8130pF @ 10V
Power Dissipation: 6.25W @ 25°C ambient, 104W @ 25°C case
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Lighting control
Industrial automation
Product Lifecycle
Current product offering
No planned discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
High efficiency and low power losses
Excellent thermal performance
Reliable and robust design
Wide operating temperature range
Compatibility with various power conversion and control applications