Manufacturer Part Number
SIR166DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET
Product Features and Performance
Low on-resistance for high efficiency
Fast switching for high-frequency applications
High power density
Robust and reliable design
Product Advantages
Excellent thermal performance
Optimized for high-frequency switching
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Current Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 15 V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Power converters
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available.
Several Key Reasons to Choose This Product
Excellent thermal performance for efficient operation
Optimized for high-frequency switching applications
Robust and reliable design for long-term use
Suitable for a wide range of power electronics applications
RoHS3 compliant for environmental compliance