Manufacturer Part Number
SIR167DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel power MOSFET in a compact PowerPAK SO-8 package
Product Features and Performance
Trench MOSFET technology for low on-resistance and fast switching
High current capability up to 60A
Low on-resistance down to 5.5 mOhm
Wide operating temperature range of -55°C to 150°C
Low gate charge for efficient switching
Compact PowerPAK SO-8 package
Product Advantages
Excellent power density and efficiency
Reliable and robust design
Suitable for high-current, high-temperature applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 5.5 mOhm
Continuous Drain Current (Id): 60A
Input Capacitance (Ciss): 4380 pF
Power Dissipation (Pd): 65.8W
Quality and Safety Features
RoHS3 compliant
Moisture Sensitivity Level 1 (MSL1)
ESD protection
Compatibility
Suitable for use in various power electronic applications, such as motor drives, power supplies, and DC-DC converters
Application Areas
Industrial equipment
Automotive electronics
Consumer electronics
Telecommunications equipment
Product Lifecycle
Currently available
No discontinuation or replacement plans known
Key Reasons to Choose This Product
Exceptional power density and efficiency
Reliable and robust performance in high-current, high-temperature environments
Compact and space-saving PowerPAK SO-8 package
Comprehensive technical parameters and features to meet design requirements
Compliance with industry safety and quality standards
SiR166DP-T1-E3Electro-Films (EFI) / Vishay