Manufacturer Part Number
SIR164DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Trench Technology
30V Drain to Source Voltage
50A Continuous Drain Current
5mOhm On-Resistance
2W Power Dissipation (Ta), 69W (Tc)
Fast Switching Speed
Low Gate Charge
Product Advantages
High Power Density
Efficient Power Conversion
Reliable Performance
Key Technical Parameters
Vds: 30V
Vgs (Max): ±20V
Rds On (Max): 2.5mOhm
Id (Continuous): 50A
Ciss (Max): 3950pF
Qg (Max): 123nC
Vgs(th) (Max): 2.5V
Quality and Safety Features
RoHS3 Compliant
Suitable for High-Reliability Applications
Compatibility
Surface Mount Packaging (PowerPAK SO-8)
Application Areas
Power Supplies
Inverters
Motor Drives
Industrial Controls
Product Lifecycle
Current Production
Replacement/Upgrade Parts Available
Key Reasons to Choose
High Power Handling Capability
Low On-Resistance
Fast Switching Performance
Reliable and Efficient Operation
Compatibility with Common PCB Mounting