Manufacturer Part Number
SIR158DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET® power MOSFET for use in power management, power conversion, and motor control applications.
Product Features and Performance
Trench technology for low on-resistance and high switching speed
Very low on-resistance of 1.8 mΩ at 20 A, 10 V
Continuous drain current of 60 A at 25°C case temperature
High power dissipation of 83 W at 25°C case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and power density
Reduced conduction and switching losses
Smaller solution size and lower system cost
Key Technical Parameters
Drain-to-source voltage (Vdss) of 30 V
Gate-to-source voltage (Vgs) range of ±20 V
Extremely low on-resistance (Rds(on)) of 1.8 mΩ
High continuous drain current (Id) of 60 A
High power dissipation (Pd) of 83 W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability and safety-critical applications
Compatibility
Suitable for use in power management, power conversion, and motor control applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial, automotive, and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and power density
Very low on-resistance for reduced conduction losses
High continuous drain current and power dissipation
Wide operating temperature range
Compatibility with a variety of power management and motor control applications
RoHS3 compliance for use in high-reliability and safety-critical applications