Manufacturer Part Number
SI7615DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel power MOSFET with low RDS(on) in PowerPAK 1212-8 package
Product Features and Performance
Low on-resistance (RDS(on) = 3.9 mOhm @ 20 A, 10 V)
High current capability (ID = 35 A @ 25°C)
Low gate charge (Qg = 183 nC @ 10 V)
Wide operating temperature range (-55°C to 150°C)
Fast switching speed
Low power dissipation (3.7 W @ 25°C, 52 W @ 100°C)
Product Advantages
Ideal for high-current, high-efficiency power management applications
Compact and thermally efficient PowerPAK 1212-8 package
Enhanced power density and efficiency
Robust design for reliable operation
Key Technical Parameters
Drain-to-Source Voltage (VDS): 20 V
Gate-to-Source Voltage (VGS): ±12 V
On-Resistance (RDS(on)): 3.9 mOhm @ 20 A, 10 V
Continuous Drain Current (ID): 35 A @ 25°C
Input Capacitance (Ciss): 6000 pF @ 10 V
Gate Charge (Qg): 183 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for industrial and automotive applications
Compatibility
Compatible with a wide range of power management and control circuits
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Industrial and automotive power management
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from Vishay/Siliconix
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current handling capability
Compact and thermally efficient packaging
Robust design for reliable operation in harsh environments
Suitable for a wide range of power management and control applications