SI7611DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7611DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-Channel TrenchFET MOSFET with low on-resistance and high current capability.

Product Features and Performance

Low on-resistance of 25 mΩ

High continuous drain current of 18 A at 25°C

Wide operating temperature range of -50°C to 150°C

Low gate charge of 62 nC at 10 V

High input capacitance of 1980 pF at 20 V

Product Advantages

Excellent power efficiency due to low on-resistance

High current handling capability

Wide operating temperature range

Suitable for high-frequency switching applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 40 V

Gate to Source Voltage (Vgs) (Max): ±20 V

Continuous Drain Current (Id) @ 25°C: 18 A

On-Resistance (Rds(on)) @ 9.3 A, 10 V: 25 mΩ

Input Capacitance (Ciss) @ 20 V: 1980 pF

Power Dissipation (Max): 3.7 W (Ta), 39 W (Tc)

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Suitable for a wide range of power management and control applications.

Application Areas

DC-DC converters

Motor drives

Switched-mode power supplies

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and widely available. There are no plans for discontinuation or end-of-life at this time.

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

High current handling capability for demanding applications

Wide operating temperature range for versatile use

Suitable for high-frequency switching applications

RoHS3 compliance for environmental responsibility

Surface mount packaging for ease of integration