Manufacturer Part Number
SI7540DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Dual N and P-channel MOSFET array
Intended for low-side or high-side switching applications
Product Features and Performance
12V drain-to-source voltage
17mΩ maximum on-resistance
6A/5.7A continuous drain current
Logic-level gate drive
-55°C to +150°C operating temperature range
Product Advantages
Compact PowerPAK SO-8 Dual package
Optimized for space-constrained designs
Excellent thermal performance
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 12V
On-Resistance (Rds(on)): 17mΩ
Continuous Drain Current (Id): 7.6A/5.7A
Gate Threshold Voltage (Vgs(th)): 1.5V
Gate Charge (Qg): 17nC
Quality and Safety Features
RoHS3 compliant
Reliable trench MOSFET technology
Compatibility
Suitable for low-side or high-side switching applications
Can be used in various power management and control circuits
Application Areas
Power supplies
Motor drives
Switching circuits
Battery management systems
Industrial and automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from Vishay/Siliconix
Key Reasons to Choose This Product
Compact, space-saving package
Excellent thermal performance
Wide operating temperature range
Reliable trench MOSFET technology
Suitable for a wide range of applications