SI7501DN-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7501DN-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel and P-Channel Enhancement Mode PowerPAK 1212-8 MOSFET

Product Features and Performance

N and P-Channel, Common Drain configuration

30V Drain-to-Source Voltage (Vdss)

35mΩ Maximum On-Resistance (Rds(on)) at 7.7A, 10V

4A/4.5A Continuous Drain Current (Id) at 25°C

14nC Maximum Gate Charge (Qg) at 10V

Logic Level Gate (Vgs(th) Max 3V at 250μA)

Surface Mount Package

Product Advantages

Dual N-Channel and P-Channel in a single package

Low On-Resistance for improved efficiency

Logic Level Gate for easy control

Compact PowerPAK 1212-8 Dual package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

On-Resistance (Rds(on)): 35mΩ

Continuous Drain Current (Id): 5.4A/4.5A

Gate Threshold Voltage (Vgs(th)): 3V

Quality and Safety Features

RoHS3 Compliant

Reliable PowerPAK 1212-8 Dual package

Compatibility

Suitable for a wide range of electronic applications requiring dual N-Channel and P-Channel MOSFETs

Application Areas

Power supplies

Motor drives

Switching circuits

General-purpose power switching

Product Lifecycle

Active product

Replacements and upgrades available

Key Reasons to Choose This Product

Dual N-Channel and P-Channel configuration in a single package

Low on-resistance for improved efficiency

Logic level gate for easy control

Compact and reliable PowerPAK 1212-8 Dual package

RoHS3 compliance for environmental responsibility