Manufacturer Part Number
SI7489DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
100V Drain-Source Voltage
±20V Gate-Source Voltage
41mOhm Max On-Resistance @ 7.8A, 10V
28A Continuous Drain Current @ 25°C
4600pF Max Input Capacitance @ 50V
2W Power Dissipation @ Ta, 83W @ Tc
160nC Max Gate Charge @ 10V
Product Advantages
High power density
Low on-resistance
High voltage handling capability
Wide operating temperature range
Key Technical Parameters
Voltage: 100V Drain-Source, ±20V Gate-Source
Current: 28A Continuous Drain @ 25°C
On-Resistance: 41mOhm Max @ 7.8A, 10V
Capacitance: 4600pF Max Input @ 50V
Power Dissipation: 5.2W @ Ta, 83W @ Tc
Gate Charge: 160nC Max @ 10V
Quality and Safety Features
RoHS3 Compliant
PowerPAK SO-8 Package
Compatibility
Surface Mount
Application Areas
Power management
Motor control
Switching circuits
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation plans
Replacement or upgrade options available
Key Reasons to Choose
High power density
Low on-resistance
High voltage and current handling
Wide operating temperature range
Reliable PowerPAK SO-8 package
RoHS3 compliance for safety and environmental responsibility
SI7489Electro-Films (EFI) / Vishay