SI7613DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7613DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product - Single Transistor, FET, MOSFET

Product Features and Performance

P-Channel MOSFET

20V Drain-Source Voltage (Vdss)

±16V Gate-Source Voltage (Vgs)

7mOhm On-Resistance (Rds(on)) @ 17A, 10V

35A Continuous Drain Current (Id) @ 25°C

2620pF Input Capacitance (Ciss) @ 10V

8W Power Dissipation (Max) @ Ta, 52.1W @ Tc

87nC Gate Charge (Qg) @ 10V

Operating Temperature Range: -50°C to 150°C (TJ)

Product Advantages

High efficiency and low power loss

Excellent switching performance

Compact and space-saving design

Key Technical Parameters

MOSFET Technology

PowerPAK 1212-8 Surface Mount Package

Tape & Reel (TR) Packaging

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic systems and applications

Application Areas

Suitable for a wide range of power management and control applications

Product Lifecycle

Currently available, no discontinuation plans known

Several Key Reasons to Choose This Product

High efficiency and low power loss for improved system performance

Excellent switching characteristics for fast and reliable operation

Compact and space-saving design for versatile integration

RoHS3 compliance for environmentally-friendly use

Compatibility with a wide range of electronic systems and applications