Manufacturer Part Number
SI7615ADN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
A p-channel enhancement-mode field-effect transistor (FET) in a PowerPAK 1212-8 package.
Product Features and Performance
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Rugged and reliable design
Optimized for high-power, high-frequency switching applications
Product Advantages
Excellent thermal performance
High power density
Reduced switching losses
Improved efficiency
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20 V
Gate-to-Source Voltage (Vgs): ±12 V
On-Resistance (Rds(on)): 4.4 mΩ @ 20 A, 10 V
Continuous Drain Current (Id): 35 A (Tc)
Input Capacitance (Ciss): 5590 pF @ 10 V
Power Dissipation (Max): 3.7 W (Ta), 52 W (Tc)
Gate Charge (Qg): 183 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Optimized for high reliability and performance
Compatibility
Suitable for a wide range of high-frequency, high-power switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent thermal performance and high power density for efficient power conversion
Fast switching and low on-resistance for improved efficiency
Rugged and reliable design for long-term, high-performance operation
Optimized for high-frequency, high-power switching applications