Manufacturer Part Number
SI7615CDN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
20V Drain-to-Source Voltage
±8V Gate-to-Source Voltage
9mOhm Drain-to-Source On-Resistance (Max) at 12A, 4.5V
35A Continuous Drain Current (Max) at 25°C
3860pF Input Capacitance (Max) at 10V
33W Power Dissipation (Max) at Tc
1V Gate Threshold Voltage (Max) at 250A
8V/4.5V Drive Voltage (Max Rds On, Min Rds On)
63nC Gate Charge (Max) at 4.5V
Product Advantages
Efficient power switching
Low on-resistance
High current capability
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage: 20V
Gate-to-Source Voltage: ±8V
Drain-to-Source On-Resistance: 9mOhm (Max) at 12A, 4.5V
Continuous Drain Current: 35A (Max) at 25°C
Input Capacitance: 3860pF (Max) at 10V
Power Dissipation: 33W (Max) at Tc
Gate Threshold Voltage: 1V (Max) at 250A
Drive Voltage: 1.8V (Max Rds On), 4.5V (Min Rds On)
Gate Charge: 63nC (Max) at 4.5V
Quality and Safety Features
ROHS3 Compliant
Wide operating temperature range: -55°C to 150°C (TJ)
Compatibility
PowerPAK 1212-8 package
TrenchFET Gen III series
Application Areas
Power switching
Motor control
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
Currently available
Replacement or upgrade options may be available in the future
Key Reasons to Choose
High efficiency power switching
Low on-resistance for reduced power losses
High current handling capability
Wide operating temperature range
Reliable and robust design
Compatibility with common power electronics applications