SI7619DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7619DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

Product Features and Performance

RoHS3 Compliant

PowerPAK 1212-8 package

TrenchFET series

P-Channel MOSFET

Drain-to-Source Voltage (Vdss) of 30V

Maximum Gate-to-Source Voltage (Vgs) of ±20V

On-Resistance (Rds(on)) of 21mΩ @ 10.5A, 10V

Continuous Drain Current (Id) of 24A @ 25°C (Tc)

Input Capacitance (Ciss) of 1350pF @ 15V

Power Dissipation of 3.5W (Ta), 27.8W (Tc)

Gate Charge (Qg) of 50nC @ 10V

Product Advantages

High performance P-Channel MOSFET

Low on-resistance for efficient power conversion

Suitable for a wide range of power management applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Maximum Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 21mΩ @ 10.5A, 10V

Continuous Drain Current (Id): 24A @ 25°C (Tc)

Input Capacitance (Ciss): 1350pF @ 15V

Power Dissipation: 3.5W (Ta), 27.8W (Tc)

Gate Charge (Qg): 50nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for a wide operating temperature range of -55°C to 150°C (TJ)

Compatibility

Surface mount package (PowerPAK 1212-8)

Suitable for Tape & Reel (TR) packaging

Application Areas

Power management

Power conversion

Switching power supplies

Motor control

Automotive electronics

Product Lifecycle

Currently available

No information on discontinuation or replacements/upgrades

Several Key Reasons to Choose This Product

High performance P-Channel MOSFET with low on-resistance for efficient power conversion

Suitable for a wide range of power management applications

RoHS3 compliant and wide operating temperature range

Surface mount package and Tape & Reel (TR) packaging options