Manufacturer Part Number
SI7617DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
P-Channel MOSFET Transistor
Product Features and Performance
30V Drain-Source Voltage
3 mOhm On-Resistance
35A Continuous Drain Current
1800 pF Input Capacitance
7W Power Dissipation (Ta), 52W (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-Resistance for Improved Efficiency
High Current Handling Capability
Compact PowerPAK 1212-8 Package
Suitable for High-Power, High-Efficiency Applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 12.3 mOhm
Continuous Drain Current (Id): 35A
Input Capacitance (Ciss): 1800 pF
Power Dissipation: 3.7W (Ta), 52W (Tc)
Quality and Safety Features
RoHS3 Compliant
Designed for Reliable Performance in High-Power Applications
Compatibility
Suitable for Surface Mount Applications
Application Areas
Power Supplies
DC/DC Converters
Motor Drives
Industrial Electronics
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
Excellent performance characteristics (low on-resistance, high current, high power dissipation)
Compact and efficient PowerPAK 1212-8 package
Suitable for a wide range of high-power, high-efficiency applications
Reliable operation within the specified temperature range
RoHS3 compliance for environmental responsibility