Manufacturer Part Number
SI7454DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel Trench MOSFET Transistor
Part of the TrenchFET series
Product Features and Performance
Drain to Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 34mΩ @ 7.8A, 10V
Continuous Drain Current (Id): 5A @ 25°C
Power Dissipation (Max): 1.9W
Product Advantages
Low on-resistance for low power loss
Trench MOSFET technology for improved performance
Wide temperature range operation (-55°C to 150°C)
Surface mount packaging for compact design
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 4V @ 250A
Gate Charge (Qg): 30nC @ 10V
Quality and Safety Features
RoHS3 compliant
Vishay / Siliconix quality and reliability
Compatibility
Compatible with standard SO-8 footprint
Suitable for surface mount assembly
Application Areas
Power supplies
Motor drives
Switching regulators
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available from Vishay
Key Reasons to Choose
Excellent performance-to-cost ratio
Proven Vishay / Siliconix reliability
Wide operating temperature range
Ease of integration with surface mount design