SI7456DP-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7456DP-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Single

Product Features and Performance

ROHS3 Compliant

PowerPAK SO-8 package

TrenchFET series

Tape & Reel (TR) packaging

Operating temperature range: -55°C to 150°C

Drain to Source Voltage (Vdss): 100 V

Gate-Source Voltage (Vgs) (Max): ±20 V

On-State Resistance (Rds On) (Max): 25 mΩ @ 9.3 A, 10 V

MOSFET (Metal Oxide) technology

Continuous Drain Current (Id) @ 25°C: 5.7 A

Power Dissipation (Max): 1.9 W

N-Channel FET type

Gate Threshold Voltage (Vgs(th)) (Max): 4 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 6 V, 10 V

Gate Charge (Qg) (Max): 44 nC @ 10 V

Surface Mount mounting

Product Advantages

High performance and efficiency

Wide operating temperature range

Compact and space-saving PowerPAK SO-8 package

Suitable for various power electronics applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 100 V

Gate-Source Voltage (Vgs) (Max): ±20 V

On-State Resistance (Rds On) (Max): 25 mΩ

Continuous Drain Current (Id) @ 25°C: 5.7 A

Power Dissipation (Max): 1.9 W

Quality and Safety Features

ROHS3 compliant

Reliable and durable construction

Compatibility

Suitable for various power electronics applications

Application Areas

Power supplies

Motor drives

Switching circuits

Industrial and consumer electronics

Product Lifecycle

Currently available

No information on discontinuation or replacement

Key Reasons to Choose This Product

High performance and efficiency

Wide operating temperature range

Compact and space-saving package

Suitable for a variety of power electronics applications

Reliable and durable construction