Manufacturer Part Number
SI7456DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode power MOSFET with ultra-low on-resistance.
Product Features and Performance
High current capability up to 5.7A
Ultra-low on-resistance down to 25mOhm
Wide operating temperature range from -55°C to 150°C
Low gate charge of 44nC at 10V
Suitable for high-frequency switching applications
Product Advantages
Excellent performance in power conversion and motor control circuits
Reliable and efficient operation
Compact size for space-constrained designs
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 5.7A
On-Resistance (Rds(on)): 25mOhm
Power Dissipation (Pd): 1.9W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with PowerPAK SO-8 package
Interchangeable with similar N-channel MOSFET products
Application Areas
Power conversion circuits
Motor control systems
Battery management systems
Industrial and automotive electronics
Product Lifecycle
Currently in active production
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Efficient power handling capability
Reliable and robust design
Suitable for a wide range of high-power applications
Cost-effective solution for power management needs