Manufacturer Part Number
SI7456DDP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET in a PowerPAK SO-8 package.
Product Features and Performance
100V drain-to-source voltage
23mOhm maximum on-resistance at 10A, 10V
8A continuous drain current at 25°C
Low input capacitance of 900pF at 50V
Wide operating temperature range of -55°C to 150°C
Optimized for high-frequency, high-efficiency switching applications
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Compact PowerPAK SO-8 package
Suitable for high-frequency, high-efficiency switch mode power supplies
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 27.8A at 25°C
On-Resistance (Rds(on)): 23mOhm at 10A, 10V
Input Capacitance (Ciss): 900pF at 50V
Power Dissipation (Ptot): 5W at 25°C, 35.7W at case temperature
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety
Compatibility
Can be used in a variety of power conversion and switching applications
Application Areas
Switch mode power supplies
Motor drives
DC-DC converters
Inverters
Lighting
Product Lifecycle
This product is an active and in-production device from Vishay/Siliconix.
Replacement or upgrade options may be available.
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Compact and thermally-efficient PowerPAK SO-8 package
Wide operating temperature range for reliable performance
Optimized for high-frequency, high-efficiency switching applications
RoHS3 compliance for environmental safety