Manufacturer Part Number
SI7454DDP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Trench technology for high efficiency and low on-resistance
High drain-source voltage rating of 100V
Continuous drain current of 21A at 25°C
Low on-resistance of 33mΩ at 10A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 550pF at 50V
High power dissipation of 4.1W at Ta and 29.7W at Tc
Product Advantages
Excellent performance for power switching and control applications
Compact and efficient design with PowerPAK SO-8 package
Reliable and durable construction
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 33mΩ @ 10A, 10V
Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 550pF @ 50V
Power Dissipation: 4.1W @ Ta, 29.7W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable and stable performance
Compatibility
Compatible with a wide range of electronic devices and power systems
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Currently available
No indications of discontinuation or upcoming replacements
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved power performance
Wide operating temperature range for versatile applications
Compact and reliable design in the PowerPAK SO-8 package
Excellent thermal management capabilities for high power dissipation
Proven reliability and quality from a trusted manufacturer