Manufacturer Part Number
SI7450DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance
High drain-to-source voltage rating
Fast switching speed
Suitable for high-frequency, high-power switching applications
Product Advantages
Excellent thermal performance
High power density
Reliable and robust design
Key Technical Parameters
RoHS3 compliant
Package: PowerPAK SO-8
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 80mΩ @ 4A, 10V
Continuous Drain Current (Id): 3.2A (at 25°C)
Power Dissipation (Pd): 1.9W (at 25°C)
Operating Temperature: -55°C to 150°C
Quality and Safety Features
Designed and manufactured to high quality standards
Meets RoHS3 compliance requirements
Compatibility
Suitable for a wide range of high-frequency, high-power switching applications
Application Areas
Switching power supplies
Motor drives
Lighting ballasts
Industrial controls
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent thermal performance and power density
High reliability and robustness
Wide operating temperature range
Suitable for high-frequency, high-power switching applications
Meets RoHS3 compliance requirements
SI7450DP-T1-E3 MOSElectro-Films (EFI) / Vishay