SI7450DP-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7450DP-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products

Single Transistors FETs, MOSFETs

Product Features and Performance

RoHS3 Compliant

PowerPAK SO-8 package

TrenchFET series

Operating Temperature: -55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss): 200 V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V

MOSFET (Metal Oxide) Technology

Current Continuous Drain (Id) @ 25°C: 3.2A (Ta)

Power Dissipation (Max): 1.9W (Ta)

N-Channel FET Type

Vgs(th) (Max) @ Id: 4.5V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 6V, 10V

Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V

Surface Mount Mounting Type

Product Advantages

RoHS3 compliant

High voltage and current capability

Low on-resistance

Wide operating temperature range

Compact PowerPAK SO-8 package

Key Technical Parameters

Drain to Source Voltage (Vdss): 200 V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V

Current Continuous Drain (Id) @ 25°C: 3.2A (Ta)

Power Dissipation (Max): 1.9W (Ta)

Vgs(th) (Max) @ Id: 4.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Wide operating temperature range

Compatibility

Surface Mount packaging

Application Areas

Suitable for a variety of power conversion and control applications

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacements and upgrades may be available from the manufacturer.

Key Reasons to Choose This Product

High voltage and current capability

Low on-resistance

Wide operating temperature range

Compact and surface mount packaging

RoHS3 compliance for environmental safety