Manufacturer Part Number
SI7456CDP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel MOSFET with low on-resistance and fast switching
Product Features and Performance
Trench MOSFET technology for low on-resistance and fast switching
Low gate charge for efficient switching
Optimized for high-frequency, high-efficiency power conversion applications
Suitable for high-current and high-voltage applications
Product Advantages
Excellent on-resistance and switching performance
High power density and efficiency
Robust and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 10 A, 10 V
Current Continuous Drain (Id) @ 25°C: 27.5 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 50 V
Power Dissipation (Max): 5 W (Ta), 35.7 W (Tc)
Vgs(th) (Max) @ Id: 2.8 V @ 250 A
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Operating Temperature: -55°C ~ 150°C (TJ)
Compatibility
Suitable for high-frequency, high-efficiency power conversion applications
Can be used in various power management, motor control, and switching applications
Application Areas
High-efficiency power supplies
Motor drives
Switch-mode power supplies
Telecom and industrial power systems
Product Lifecycle
This product is currently in active production and available for purchase.
Replacement or upgrade options may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent on-resistance and switching performance for high-efficiency power conversion
High power density and efficiency for compact and energy-saving designs
Robust and reliable design for demanding applications
Wide operating temperature range and RoHS compliance for versatile use