Manufacturer Part Number
STP25NM60N
Manufacturer
STMicroelectronics
Introduction
N-Channel MOSFET transistor
Part of the MDmesh II series
Product Features and Performance
High voltage rating of 600V
Low on-resistance of 160mOhm
Continuous drain current of 21A
Operating temperature up to 150°C
Low gate charge of 84nC
Product Advantages
Efficient power switching
Robust and reliable performance
Suitable for high-voltage applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs Max): ±25V
Drain Current (Id): 21A
On-Resistance (Rds(on) Max): 160mOhm
Input Capacitance (Ciss Max): 2400pF
Power Dissipation (Max): 160W
Quality and Safety Features
ROHS3 compliant
Through-hole TO-220 package
Compatibility
Can be used in a variety of power electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Mature product, no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose
Excellent power handling capabilities
High reliability and ruggedness
Cost-effective solution for high-voltage applications
Ease of integration and compatibility