Manufacturer Part Number
STP24NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor
Part of the MDmesh II series
Product Features and Performance
600V drain-to-source voltage (Vdss)
Up to 17A continuous drain current (Id) at 25°C
Low on-resistance (Rds(on)) of 190mΩ @ 8A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 1400pF @ 50V
Maximum power dissipation of 125W at Tc
Product Advantages
Excellent switching performance
High power handling capability
Stable operation over wide temperature range
Compact TO-220 package
Key Technical Parameters
Vdss: 600V
Vgs(max): ±30V
Rds(on) (max): 190mΩ @ 8A, 10V
Id(max): 17A @ 25°C
Ciss (max): 1400pF @ 50V
Power Dissipation (max): 125W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation
Household appliances
Product Lifecycle
Current production model
Replacement parts and upgrades available
Key Reasons to Choose This Product
High-voltage and high-current handling capability
Excellent switching performance for efficient power conversion
Stable operation over wide temperature range
Compact and reliable TO-220 package
RoHS3 compliance for environmental sustainability