Manufacturer Part Number
STP25N60M2-EP
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Suitable for high-voltage, high-power switching and amplification applications
Product Features and Performance
600V MOSFET with low on-resistance
Low gate charge for fast switching
High avalanche ruggedness
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Fast switching capability for high-frequency applications
Robust design with high avalanche energy rating
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 188mΩ @ 9A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss): 1090pF @ 100V
Power Dissipation (Ptot): 150W @ Tc
Quality and Safety Features
Compliant with RoHS 3 directive
Robust TO-220 package with high thermal performance
Compatibility
Suitable for a wide range of high-voltage, high-power switching and amplification applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Power factor correction (PFC) circuits
Welding equipment
Industrial automation
Product Lifecycle
This product is an active and widely-used MOSFET from STMicroelectronics
Replacements and upgrades are readily available
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Fast switching capability for high-frequency applications
Robust design with high avalanche energy rating
Wide operating temperature range for versatile applications
RoHS 3 compliance for environmental responsibility
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