Manufacturer Part Number
STP25NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
600V drain-to-source voltage rating
Low on-resistance of 160 milliohms
Continuous drain current of 21A at 25°C
Fast switching speed
High power density and efficiency
Product Advantages
Suitable for high-voltage, high-power applications
Excellent thermal performance
Reliable and robust design
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs Max): ±25V
On-resistance (Rds(on) Max): 160 milliohms
Continuous drain current (Id): 21A at 25°C
Input capacitance (Ciss Max): 2400 pF
Power dissipation (Tc): 160W
Operating temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Compatibility
TO-220 package
FDmesh II series
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer power electronics
Product Lifecycle
Currently available
No end-of-life announcement
Key Reasons to Choose
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Fast switching speed for high-frequency applications
Robust and reliable design for long-term performance
Compatibility with standard TO-220 package
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