STP26N60M2 - STMicroelectronics

Manufacturer Part Number

STP26N60M2

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET

Suitable for use in a wide range of industrial and consumer applications

Product Features and Performance

Drain-source voltage (Vdss) of 600 V

Continuous drain current (Id) of 20 A at 25°C case temperature

On-state resistance (Rds(on)) as low as 0.22 Ω

Fast switching capabilities

Low gate charge

Product Advantages

Excellent power handling and efficiency

Robust design for reliable operation

Optimized for high-frequency and high-power applications

Key Technical Parameters

Drain-source voltage (Vdss): 600 V

Gate-source voltage (Vgs): ±25 V

Continuous drain current (Id): 20 A at 25°C case temperature

On-state resistance (Rds(on)): 0.22 Ω (typical)

Power dissipation (Ptot): 169 W at 25°C case temperature

FET type: N-channel MOSFET

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high-quality standards

Compatibility

Suitable for a wide range of industrial and consumer applications, such as power supplies, motor drives, and switched-mode power supplies

Application Areas

Power conversion and control

Industrial and consumer electronics

Motor drives

Switched-mode power supplies

Product Lifecycle

Currently in production

Replacement and upgrade options available

Key Reasons to Choose This Product

High power handling and efficiency

Robust and reliable design

Optimized for high-frequency and high-power applications

Wide range of compatible applications

Availability of replacement and upgrade options