Manufacturer Part Number
STP26N65DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET
Designed for power conversion and motor drive applications
Product Features and Performance
High voltage rating of 650V
Low on-resistance of 190mΩ @ 10A, 10V
High continuous drain current of 20A @ 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge of 35.5nC @ 10V
Fast switching capability
Product Advantages
Efficient power conversion with low conduction and switching losses
Reliable operation in demanding applications
Compact and easy to integrate design
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 190mΩ @ 10A, 10V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 1480pF @ 100V
Power Dissipation (Ptot): 170W @ Tc
Quality and Safety Features
RoHS3 compliant
Qualified to automotive standards
Compatibility
Compatible with standard MOSFET gate drivers and power supply circuits
Application Areas
Power conversion
Motor drives
Inverters
Converters
Switch-mode power supplies
Product Lifecycle
Currently in active production
No known discontinuation plans
Replacement and upgrade options available
Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Reliable operation in harsh environments
Compact and easy to integrate design
Broad compatibility with standard power electronics circuits
Proven reliability and quality from a reputable manufacturer
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