Manufacturer Part Number
STP25NM50N
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel MOSFET
Product Features and Performance
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25 V
Rds On (Max) @ Id, Vgs: 140 mΩ @ 11 A, 10 V
Current Continuous Drain (Id) @ 25°C: 22 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
Power Dissipation (Max): 160 W (Tc)
Vgs(th) (Max) @ Id: 4 V @ 250 A
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Product Advantages
High breakdown voltage
Low on-resistance
High current capability
Suitable for high-power applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for various high-power applications
Application Areas
Suitable for high-voltage, high-power applications such as power supplies, motor drives, and switching circuits
Product Lifecycle
This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
High breakdown voltage for reliable operation in high-voltage applications
Low on-resistance for efficient power handling
High current capability for demanding applications
Suitable for a wide range of high-power applications
Compliance with RoHS3 standards for environmental responsibility