Manufacturer Part Number
STP25N80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-Channel power MOSFET in a TO-220 package
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage rating of 800V
Low on-resistance (R_DS(on)) of 260mΩ @ 19.5A, 10V
High continuous drain current (I_D) of 19.5A at 25°C
Low input capacitance (C_iss) of 1600pF @ 100V
High power dissipation capability of 250W at 25°C
Product Advantages
Suitable for high-voltage, high-power applications
Excellent efficiency and low switching losses
Robust and reliable performance
Key Technical Parameters
Drain-to-Source Voltage (V_DS): 800V
Gate-to-Source Voltage (V_GS): ±30V
Threshold Voltage (V_GS(th)): 5V @ 100A
On-Resistance (R_DS(on)): 260mΩ @ 19.5A, 10V
Input Capacitance (C_iss): 1600pF @ 100V
Power Dissipation (P_D): 250W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive power electronics
Product Lifecycle
This product is not nearing discontinuation
Replacement or upgrade options are available
Key Reasons to Choose This Product
High-voltage and high-current capability
Low on-resistance for high efficiency
Robust and reliable performance
Wide operating temperature range
Suitable for a variety of high-power applications