Manufacturer Part Number
STP120NF10
Manufacturer
STMicroelectronics
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
Very low on-resistance for high efficiency
High current handling capability
Fast switching speed
Robust design for high reliability
Product Advantages
Excellent thermal performance
Optimized for high-power applications
Suitable for a wide range of operating temperatures
Key Technical Parameters
Drain-to-source voltage (VDS): 100V
Gate-to-source voltage (VGS) max: ±20V
On-resistance (RDS(on)): 10.5mΩ @ 60A, 10V
Continuous drain current (ID): 110A @ 25°C
Quality and Safety Features
RoHS3 compliant
Stringent quality control and testing
Compatibility
Compatible with a wide range of power electronic systems and applications
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
Currently in production
Availability of replacements and upgrades
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable design
Broad compatibility and versatility
Optimized for high-power applications