Manufacturer Part Number
STP12N120K5
Manufacturer
STMicroelectronics
Introduction
Discrete semiconductor product
Single transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Voltage rating of 1200 V
Continuous drain current of 12 A at 25°C
On-resistance of 690 mOhm at 6 A, 10 V
Input capacitance of 1370 pF at 100 V
Power dissipation of 250 W at Tc
Gate threshold voltage of 5 V at 100 A
Gate charge of 44.2 nC at 10 V
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1200 V
Gate-to-Source Voltage (Vgs): ±30 V
On-Resistance (Rds(on)): 690 mOhm @ 6 A, 10 V
Continuous Drain Current (ID): 12 A @ 25°C
Input Capacitance (Ciss): 1370 pF @ 100 V
Power Dissipation (Ptot): 250 W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220 package for through-hole mounting
Compatibility
Industry-standard TO-220 package
Compatible with various MOSFET-based power circuits
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Household appliances
Telecommunications equipment
Product Lifecycle
Current product offering, not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range
Industry-standard packaging for easy integration
RoHS3 compliance for environmental responsibility
