Manufacturer Part Number
STP11NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance MOSFET transistor with low on-resistance and fast switching capabilities
Product Features and Performance
600V drain-to-source voltage rating
Low on-resistance of 450mΩ at 5A, 10V
10A continuous drain current at 25°C
Fast switching with 30nC gate charge at 10V
Wide operating temperature range up to 150°C
Product Advantages
Efficient power conversion with low conduction losses
Reliable performance in high-voltage applications
Suitable for high-frequency switching circuits
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 450mΩ @ 5A, 10V
Continuous drain current (Id): 10A @ 25°C
Input capacitance (Ciss): 850pF @ 50V
Power dissipation (Tc): 90W
Quality and Safety Features
RoHS3 compliant
Meets safety requirements for high-voltage applications
Compatibility
TO-220 package for easy integration into various circuit designs
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Renewable energy systems
Product Lifecycle
Currently in production
No plans for discontinuation
Replacements and upgrades available from STMicroelectronics
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and robust design for high-voltage applications
Proven track record in various industrial and consumer electronics
Supported by STMicroelectronics, a leading semiconductor manufacturer
STP11NK80ZSTMicroelectronics