Manufacturer Part Number
STP11NM60FP
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in TO-220FP package
Product Features and Performance
Drain-Source Voltage (Vdss) of 600V
On-State Resistance (Rds(on)) of 450mΩ at 5.5A, 10V
Continuous Drain Current (Id) of 11A at 25°C
Operating Temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 1000pF at 25V
Low gate charge (Qg) of 30nC at 10V
Product Advantages
Excellent performance in power switching applications
High voltage and current handling capability
Low on-state resistance for improved efficiency
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 450mΩ at 5.5A, 10V
Continuous Drain Current (Id): 11A at 25°C
Input Capacitance (Ciss): 1000pF at 25V
Gate Charge (Qg): 30nC at 10V
Quality and Safety Features
RoHS3 compliant
TO-220FP package for reliable performance
Suitable for high-power, high-voltage applications
Compatibility
Through-hole mounting
Compatible with standard TO-220 footprint and socket
Application Areas
Power supply and power conversion circuits
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High voltage and current handling capability
Low on-state resistance for improved efficiency
Wide operating temperature range
Reliable performance in high-power, high-voltage applications
RoHS3 compliance for environmental sustainability